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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -50 -6 -5 -8 UNIT V V V A A Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.2 W 20 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA ;RBE= IC=-10|I IE=-10|I A ;IE=0 A ;IC=0 MIN -50 -60 -6 2SB1165 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V 70 -0.28 -0.95 -0.55 -1.3 -1.0 -1.0 400 |I |I V V A A DC current gain Transition frequency Collector output capacitance Switching times ton tstg tf HAN INC SEM GE OND IC TOR UC 35 130 60 MHz pF IE=0; f=1MHz ; VCB=-10V Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A VCC=25V 50 450 20 ns ns ns hFE-1 Classifications Q 70-140 R 100-200 S 140-280 T 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1165 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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